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Advance Information
This document contains information on a product under development. The parametric information contains target parameters that are subject to change.
CX77314
The CX77314 Power Amplifier Module (PAM) is designed in a compact form factor for quad-band cellular handsets comprising GSM850/900, DCS1800, and PCS1900 operation. The PAM also supports Class 10 General Packet Radio Service (GPRS) multi-slot operation.
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Distinguishing Features
*
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HBT
Match Match
In
Functional Block Diagram
GSM850/900 IN
Match
GSM850/900 OUT
Power Control Band Select
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ee sh ta a
DCS/PCS IN
u. t4
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Match
CMOS Bias Controller
DCS/PCS OUT
Data Sheet Advance Information (c) 2001, 2002 Conexant Systems, Inc., All Rights Reserved.
101788P3 April 15, 2002
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Applications The RF input and output ports are internally matched to 50 to reduce the * Quad-band cellular handsets number of external components for a quad-band design. Extremely low leakage encompassing current (10 A, typical) of the dual PA module maximizes handset standby time. GSM850/900 (Class 4) The CX77314 also contains band select switching circuitry to select GSM (logic 0) DCS1800 and DCS/PCS (logic 1) as determined from the Band Select (BS) signal. In the PCS1900, and functional block diagram shown below, the BS pin selects the PA output GPRS (Class 10) multi-slot (DCS/PCS OUT or GSM850/900 OUT) while the Analog Power Control (APC) controls operation the level of output power.
The module consists of a GSM850/900 PA block and a DCS1800/PCS1900 PA block, impedance-matching circuitry for 50 input and output impedances, and interface circuitry. The two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated onto a single Gallium Arsenide (GaAs) die. One PA block supports the GSM850/900 bands and the other PA block supports the DCS1800 and PCS1900 bands. Both PA blocks share common power supply pins to distribute current. A custom CMOS integrated circuit provides the internal interface circuitry, including a current amplifier that minimizes the required power control current (IAPC) to 10 A, typical. The GaAs die, the Silicon (Si) die, and the passive components are mounted on a multi-layer laminate substrate. The assembly is encapsulated with plastic overmold.
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* * * * *
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High efficiency GSM850 55% GSM900 55% DCS 45%; PCS 45% Input/output matching 50 internal Small outline 8 mm x 10 mm Low profile 1.5 mm maximum Low APC current 10 A, typical Gold plated, lead-free contacts
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Electrical Specifications
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Electrical Specifications
The CX77314 is a static-sensitive electronic device and should not be stored or operated near strong electrostatic fields. Detailed information on device dimensions, pin descriptions, packaging and handling can be found in later sections of this data sheet.
Table 1. Absolute Maximum Ratings Parameter
Input Power (PIN) Supply Voltage (VCC), Standby, VAPC 0.3 V Control Voltage (VAPC) Storage Temperature
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Minimum
-- -- -0.5 -55
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Parameter
Table 2. Recommended Operating Conditions
In
Conexant
Advance Information
Minimum
2.9 0
Supply Voltage (VCC) Supply Current (Icc)
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2
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Operating Case Temperature (TCASE) 1-Slot (12.5% duty cycle) 2-Slot (25% duty cycle) 3-Slot (37.5% duty cycle) 4-Slot ( 50% duty cycle)
NOTE(S):
(1)
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-20 -20 -20 -20
For charging conditions with VCC > 4.8 V, derate Icc linearly down to 0.5 A max at VCC = 5.5 V.
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Maximum
15 7 V V C VCCMAX - 0.2 (See Table 3) +100
The following tables list the electrical characteristics of the CX77314 Power Amplifier Module. Table 1 lists the absolute maximum ratings and Table 2 shows the recommended operating conditions. Table 3 lists the electrical characteristics of the CX77314 for modes GSM850, GSM900, DCS1800 and PCS1900. Figure 1 is a diagram of a typical CX77314 application.
Typical
3.5
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Unit
dBm
Maximum
4.8V(1) 2.5(1)
Unit
V A C
100 90 75 60
101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Electrical Specifications
Table 3. CX77314 Electrical Specifications(1) (1 of 8) Parameter Symbol Test Condition General
Supply voltage Power control current Standby Mode Leakage current VCC IAPC Iq VCC 4.5 V VAPC 0.3 V TCASE = +25 C PIN -60 dBm -- -- -- 2.9 --
Min
Typical
3.5 10
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1 824 6 0.1 50 -- 34.5 32.5 32.5 -- --
APC Enable Threshold APC Enable Switching Delay
VAPCTH tSW
Time from VAPC VAPCTH until POUT (POUT_FINAL - 3 dB)
GSM850 Mode (f = 824 to 849 MHz and PIN = 6 to 12 dBm)
Frequency range Input power Analog power control voltage Power Added Efficiency f PIN VAPC PAE -- --
POUT 35 dBm
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2nd to 13th harmonics Output power
2f0 to 13f0 POUT
In
VCC = 3.5 V VAPC 2.0 V TCASE = +25 C POUT = 5 to 35 dBm, controlled by VAPC PIN = 12 dBm VAPC = 0.3 V
VCC = 3.5 V POUT 34.5 dBm VAPC 2.0 V, pulse width 577 s, duty cycle 1:8 TCASE = +25 C
BW = 3 MHz 5 dBm POUT 35 dBm
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POUTMAX LOW VOLTAGE
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VCC = 2.9 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 7 dBm VCC = 4.8 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 7 dBm
POUTMAX HIGH VOLTAGE
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Input VSWR
IN POUTSTANDBY
Forward isolation
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101788P3 April 15, 2002
Conexant
Advance Information
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-- -- 10 A 200 -- 500 3 mV s -- -- -- 55 849 12 2.1 -- MHz dBm V % -20 35.0 -10 -- dBm dBm 33 -- dBm 33 -- dBm 1.5:1 -30 2.2:1 -25 dBm
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Max Units
4.8 V 100 A
3
Electrical Specifications
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (2 of 8) Parameter
Switching time
Symbol
RISE, FALL
Test Condition
Time from POUT = -10 dBm to POUT = +5 dBm, 90% Time from POUT = -10 dBm to POUT = +20 dBm, 90% Time from POUT = -10 dBm to POUT = +34.5 dBm, 90%
Min
-- -- --
Typical
2.5 2.0 2.0
Spurious
Spur
Load mismatch
Load
Noise power
PNOISE
In e nc
Coupling of Fundamental, 2nd, and 3rd harmonic from the GSM band into the DCS/PCS band f0 2f0 3f0
At f0 + 20 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 34.5 dBm TCASE = +25 C At f0 + 10 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 34.5 dBm TCASE = +25 C At 1805 to 1880 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 34.5 dBm TCASE = +25 C
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All combinations of the following parameters: VAPC = controlled(2) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 10:1, all phase angles
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-- -- -- -- -- --
All combinations of the following parameters: VAPC = controlled(2) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 8:1, all phase angles
Measured at the DCS/PCS output, -15 dBm POUT 34.5 dBm Measured at the DCS/PCS output, -15 dBm POUT 34.5 dBm Measured at the DCS/PCS output, -15 dBm POUT 34.5 dBm
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Conexant
Advance Information
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-- -82 -- -76 -- -84 6 -25 -18 9 -20 -15
No parasitic oscillation > -36 dBm
No module damage or permanent degradation
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Max
3.0 3.0 2.5
Units
s s s
dBm
dBm
dBm
dBm dBm dBm
101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (3 of 8) Parameter Symbol Test Condition Min
Electrical Specifications
Typical
GSM900 Mode (f = 880 to 915 MHz and PIN = 6 to 12 dBm)
Frequency range Input power Analog power control voltage Power Added Efficiency f PIN VAPC PAE POUT 35 dBm VCC = 3.5 V POUT 34.5 dBm VAPC 2.0 V, pulse width 577 s, duty cycle 1:8 TCASE = +25 C -- -- 880 6 0.1 50
-- --
2nd to 13th harmonics Output power
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-- 34.5 32.5 32.5 -- -- -- -- --
2f0 to 13f0 POUT
BW = 3 MHz 5 dBm POUT 35 dBm VCC = 3.5 V VAPC 2.0 V TCASE = +25 C
POUTMAX LOW VOLTAGE
VCC = 2.9 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 7 dBm VCC = 4.8 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 7 dBm POUT = 5 to 35 dBm, controlled by VAPC PIN = 12 dBm VAPC = 0.3 V
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Input VSWR Forward isolation Switching time
IN POUTSTANDBY
In
Conexant
POUTMAX HIGH VOLTAGE
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RISE, FALL
nc
Time from POUT = -10 dBm to POUT = +5 dBm, 90% Time from POUT = -10 dBm to POUT = +20 dBm, 90% Time from POUT = -10 dBm to POUT = +34.5 dBm, 90%
Ad
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Spurious
Spur
All combinations of the following parameters: VAPC = controlled(2) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 8:1, all phase angles
101788P3 April 15, 2002
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55 -- % -20 35.0 -10 -- dBm dBm 33 -- dBm 33 -- dBm 1.5:1 -30 2.5 2.5 2.0 2.0:1 -25 3.0 3.0 2.5 dBm s s s No parasitic oscillation > -36 dBm
--
Advance Information
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Max Units
915 12 MHz dBm V 2.1
5
Electrical Specifications
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (4 of 8) Parameter
Load mismatch
Symbol
Load
Test Condition
All combinations of the following parameters: VAPC = controlled(2) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 10:1, all phase angles At f0 + 20 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 34.5 dBm TCASE = +25 C At f0 + 10 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 34.5 dBm TCASE = +25 C At 1805 to 1880 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 34.5 dBm TCASE = +25 C
Min
Typical
No module damage or permanent degradation
Noise power
PNOISE
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-- -- -- -- --
In
Conexant
Coupling of Fundamental, 2nd, and 3rd harmonic from the GSM band into the DCS/PCS band
f0 2f0 3f0
Measured at the DCS/PCS output, -15 dBm POUT 34.5 dBm
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Measured at the DCS/PCS output, -15 dBm POUT 34.5 dBm Measured at the DCS/PCS output, -15 dBm POUT 34.5 dBm
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Advance Information 101788P3 April 15, 2002
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-- -- -82 -- -76 -- -84 6 -25 -- 9 -20 -20
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Max Units
dBm dBm dBm dBm dBm dBm
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (5 of 8) Parameter Symbol Test Condition Min
Electrical Specifications
Typical
DCS1800 Mode (f = 1710 to 1785 MHz and PIN = 6 to 11 dBm)
Frequency range Input power Analog power control voltage Power Added Efficiency f PIN VAPC PAE POUT 32.5 dBm VCC = 3.5 V POUT 32 dBm VAPC 2.0 V, pulse width 577 s, duty cycle 1:8 TCASE = +25 C VCC = 3.5 V POUT 32 dBm VAPC 2.0 V pulse width 577 s, duty cycle 1:8 TCASE = +25 C PIN = 4 dBm -- -- 1710 6 0.1 43
--
--
PAELOW INPUT
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-- -- -- -- 32 -- 29.0 29.0 -- --
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2nd to 7th harmonics
2f0 3f0 4f0 to 7f0
BW = 3 MHz, 0 dBm POUT 32 dBm BW = 3 MHz, 0 dBm POUT 32 dBm BW = 3 MHz, 0 dBm POUT 32 dBm
In
VCC = 3.5 V VAPC 2.0 V TCASE = +25 C VCC = 3.5 V VAPC 2.0 V TCASE = +25 C PIN = 4 dBm POUT = 0 to 32 dBm, controlled by VAPC PIN = 11 dBm VAPC = 0.3 V
Output power
POUT
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POUTMAX LOW INPUT
POUTMAX LOW VOLTAGE
VCC = 2.9 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 6 dBm VCC = 4.8 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 6 dBm
POUTMAX HIGH VOLTAGE
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Input VSWR
IN POUTSTANDBY
Forward isolation
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101788P3 April 15, 2002
Conexant
Advance Information
at
46 -- % 45 -- % -- -- -20 32.5 -7 -7 -10 -- dBm dBm dBm dBm 32.1 -- dBm 30.5 -- dBm 30.5 -- dBm -- -40 2:1 -35 -- dBm
--
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Max Units
1785 11 MHz dBm V 2.1
7
Electrical Specifications
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (6 of 8) Parameter
Switching time
Symbol
RISE, FALL
Test Condition
Time from POUT = -10 dBm to POUT = 0 dBm, 90% Time from POUT = -10 dBm to POUT = +20 dBm, 90% Time from POUT = -10 dBm to POUT = +32 dBm, 90%
Min
-- -- --
Typical
-- -- --
Spurious
Spur
Load mismatch
Load
Noise power
PNOISE
In va nc e
8
At f0 + 20 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 32 dBm TCASE = +25 C
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All combinations of the following parameters: VAPC = controlled(3) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 10:1, all phase angles
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-- --
All combinations of the following parameters: VAPC = controlled(3) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 8:1, all phase angles
At 925 to 960 MHz, RBW = 100 kHz: VCC = 3.5 V 5 dBm POUT 32 dBm TCASE = +25 C
Ad
Conexant
Advance Information
at
-- -78 -- -95
No parasitic oscillation > -36 dBm
No module damage or permanent degradation
ion
Max
2 2 2
Units
s s s
dBm
dBm
101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (7 of 8) Parameter Symbol Test Condition Min
Electrical Specifications
Typical
PCS1900 Mode (f = 1850 to 1910 MHz and PIN = 6 to 11 dBm)
Frequency range Input power Analog power control voltage Power Added Efficiency f PIN VAPC PAE POUT 32.5 dBm VCC = 3.5 V POUT 32 dBm VAPC 2.0 V, pulse width 577 s, duty cycle 1:8 TCASE = +25 C VCC = 3.5 V POUT 32 dBm VAPC 2.0 V pulse width 577 s, duty cycle 1:8 TCASE = +25 C PIN = 4 dBm -- -- 1850 6 0.1 43
--
--
PAELOW INPUT
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-- -- -- -- 32 -- 29.0 29.0 -- --
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2nd to 7th harmonics
2f0 3f0 4f0 to 7f0
BW = 3 MHz, 0 dBm POUT 32 dBm BW = 3 MHz, 0 dBm POUT 32 dBm BW = 3 MHz, 0 dBm POUT 32 dBm
In
VCC = 3.5 V VAPC 2.0 V TCASE = +25 C VCC = 3.5 V VAPC 2.0 V TCASE = +25 C PIN = 4 dBm POUT = 0 to 32 dBm controlled by VAPC PIN = 11 dBm VAPC = 0.3 V
Output power
POUT
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POUTMAX LOW INPUT
POUTMAX LOW VOLTAGE
VCC = 2.9 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 6 dBm VCC = 4.8 V VAPC 2.6 V TCASE = -20 C to +100 C (See Table 2 for multislot.) PIN = 6 dBm
POUTMAX HIGH VOLTAGE
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Input VSWR
IN POUTSTANDBY
Forward isolation
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101788P3 April 15, 2002
Conexant
Advance Information
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46 % 44.5 -- % -- -- -20 32.5 -7 -7 -10 -- dBm dBm dBm dBm 32.3 -- dBm 30.5 -- dBm 30.5 -- dBm -- -40 2:1 -35 -- dBm
--
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Max Units
1910 11 MHz dBm V 2.1
9
Electrical Specifications
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Table 3. CX77314 Electrical Specifications(1) (8 of 8) Parameter
Switching time
Symbol
RISE, FALL
Test Condition
Time from POUT = -10 dBm to POUT = 0 dBm, 90% Time from POUT = -10 dBm to POUT = +20 dBm, 90% Time from POUT = -10 dBm to POUT = +32 dBm, 90%
Min
-- -- --
Typical
-- -- --
Spurious
Spur
Load mismatch
Load
Noise power
PNOISE
In
NOTE(S):
(1) (2) (3)
At f0 + 20 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 32 dBm TCASE = +25 C
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All combinations of the following parameters: VAPC = controlled(3) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 10:1, all phase angles
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-- --
All combinations of the following parameters: VAPC = controlled(3) PIN = min. to max. VCC = 2.9 V to 4.8 V Load VSWR = 8:1, all phase angles
At 869 to 894 MHz RBW = 100 kHz VCC = 3.5 V 5 dBm POUT 32 dBm TCASE = +25 C
Ad
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Unless specified otherwise: TCASE = -20 to max. operating temperature (see Table 2), RL = 50, pulsed operation with pulse width 2308 s and duty cycle 4:8, VCC = 2.9 V to 4.8 V. Icc = 0A to xA, where x = current at POUT = 34.5 dBm, 50 load, and VCC = 3.5 V. Icc = 0A to xA, where x = current at POUT = 32.0 dBm, 50 load, and VCC = 3.5 V.
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10
Conexant
Advance Information
at
-- -77 -- -95
No parasitic oscillation > -36 dBm
No module damage or permanent degradation
ion
Max
2 2 2
Units
s s s
dBm
dBm
101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Electrical Specifications
Figure 1. Typical CX77314 PAM Application
Vcc
10 nF A
33 pF A GSM850/900 IN 1 16 GND 15 GND 14 DCS/PCS OUT 13
10 F TANTALUM
HBT
Match Match
VAPC
B B 2
CMOS Bias Controller
Vsupply D 33 pF BS 4 3
CX77314
Match
5 DCS/PCS IN Vcc
10 nF A
6
7 GND 33 pF A
B C D
Optional depending on PAC circuit. Common connect Vbat to all Vcc pins.
Vsupply may be connected to VCC unless a regulated supply to the Bias Controller is desired.
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A
Place caps at closest proximity to PA module with the capacitor ground directly connected to the PAM grounds.
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Match
8
9
GND
GSM850/900 OUT
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101788P3 April 15, 2002
In
Conexant
Advance Information 11
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12 GND
100 pF A
11
10
GND
10 nF A
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C
Vbat
Vcc
101768_003
Package Dimensions and Pin Descriptions
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Package Dimensions and Pin Descriptions
Figure 2. CX77314 PAM Package Dimensions--16-pin Leadless (All Views)
PIN 1
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1.75 0.76 Typ 1.02 BOTTOM VIEW 1.18 10.0 0.1 FRONT VIEW
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TOP VIEW
8.0 0.1
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NOTE(S): 1. All contact points are gold plated, lead free-surfaces. 2. All dimensions are in millimeters.
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In
SIDE VIEW 1.5 +0.05/-0.1
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Conexant
Advance Information
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R0.20 Typ 0.12 Ref 2.09 1.91 1.75
Figure 2 is a mechanical diagram of the pad layout for the CX77314, a 16-pin leadless quad-band PA module, and Figure 3 shows the pin configuration. The pin numbering convention starts with pin 1 in the upper left, as indicated in Figure 3, and increments counter-clockwise around the package. Table 4 lists the pin names and descriptions.
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101788_004
101788P3 April 15, 2002
CX77314
Package Dimensions and Pin Descriptions
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Figure 3. CX77314 PAM Pin Configuration--16-Pin Leadless (Top View)
GSM850/900 IN DCS/PCS OUT
1
16
15
14
13
VAPC
2
Vsupply
3
BS
4
5 DCS/PCS IN
6 VCC
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Band Select RF and DC Ground RF and DC Ground RF and DC Ground RF and DC Ground RF and DC Ground RF and DC Ground Ground Pad, bottom
GSM850/900 OUT
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10 GND 7 8 9 GND
101788_002
Table 4. CX77314 Signal Description Pin
1 2 3 4 5 6 7 8 9
In
Name
GND
Description
GSM850/900 IN VAPC
RF input 824-915 MHz
Power Control Bias Voltage DC Supply to CMOS Bias Controller
Vsupply BS
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DCS/PCS IN VCC GND GND GSM850/900 OUT GND VCC GND DCS/PCS OUT GND GND VCC GND
RF input 1710-1910 MHz VCC (to GSM 1st stage and DCS 1st stage)
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10
RF Output 824-915 MHz
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11 12 13
VCC (to GSM and DCS Final stages)
RF Output 1710-1910 MHz
14 15
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16 GND PAD
VCC (to DCS 2nd stage)
101788P3 April 15, 2002
Conexant
Advance Information
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12 GND 11 VCC
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13
GND
VCC
GND
Package and Handling Information
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Package and Handling Information
Production quantities of this product are shipped in the standard tape and reel format illustrated in Figure 4 below.
12.00 .10 4.00 .10
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1.50 .10 1.50 .25 7 MAX. 1.68 .10 10.36 .10
Figure 4. CX77314 Tape and Reel Dimensions
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PIN 1 INDICATOR 8 MAX.
7.50 .10
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8.36 .10
In
0.32 .02
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Ao
Ko
3M CARRIER TAPE
Bo
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NOTES: 1. Carrier tape material: Black conductive polycarbonate. 2. Carrier tape part No.: 3M068051 3. Cover tape material: Transparent conductive PSA. 4. Cover tape width: 13.3 mm. 5. Number of parts per 13 inch x 24 mm reel: 2000. 6. All diagram dimensions in millimeters.
101788_006
Ad
14
Conexant
Advance Information
101788P3 April 15, 2002
16.00- .10
+ .30
at
2.00 .10 1.75 .10
Care must be taken when attaching this product, whether it is done manually or in a production solder reflow environment. For additional details on both attachment techniques, precautions, and handling procedures recommended by Conexant, please refer to Application Note: PCB Design and SMT Assembly/Rework, Document Number 101752.
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CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Electrostatic Discharge Sensitivity
Electrostatic Discharge Sensitivity
Figure 5. CX77314 ESD Sensitivity Areas (Top View)
GSM850/900 IN + 1800 V - 1950 V
1
16
15
fo
CX77314
5 6 7 8 GND 9 DCS/PCS IN > +2000 V < -2000 V VCC > +2000 V < -2000 V GND
VAPC > +2000 V < -2000 V Vsupply > +2000 V < -2000 V BS > +2000 V < -2000 V
2
3
4
In
Conexant
Advance Information
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GSM850/900 OUT > +2000 V < -2000 V
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14 13 DCS/PCS OUT > +2000 V < -2000 V GND GND 12 GND 11 VCC > +2000 V < -2000 V GND 10
101788_007
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101788P3 April 15, 2002
Various failure criteria can be utilized when performing ESD testing. Many vendors employ relaxed ESD failure standards which fail devices only after "the pin fails the electrical specification limits" or "the pin becomes completely non-functional". Conexant employs most stringent criteria, fails devices as soon as the pin begins to show any degradation on a curve tracer. To avoid ESD damage, both latent and visible, it is very important that the product assembly and test areas follow the Class-1 ESD handling precautions listed in Table 5.
Table 5. Precautions: GaAs ICs w/ESD Thresholds Greater Than 200V But Less Than 2000V
Personnel Grounding Wrist Straps Conductive Smocks, Gloves and Finger Cots Antistatic ID Badges Protective Workstation Dissipative Table Tops Protective Test Equipment (Properly Grounded) Grounded Tip Soldering Irons Conductive Solder Suckers Static Sensors Facility Relative Humidity Control and Air Ionizers Dissipative Floors (less than 109 to GND) Protective Packaging & Transportation Bags and Pouches (Faraday Shield) Protective Tote Boxes (Conductive Static Shielding) Protective Trays Grounded Carts Protective Work Order Holders
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VCC > +2000 V < -2000 V
at
The CX77314 is a Class I device. Figure 5 lists the Electrostatic Discharge (ESD) immunity level for each pin of the CX77314 product. The numbers in Figure 5 specify the ESD threshold levels for each pin where the I-V curve between the pin and ground starts to show degradation. The ESD testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body Model. Since 2000 volts represents the maximum measurement limit of the test equipment used, pins marked > 2000 V pass 2000V ESD stress.
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15
Technical Information
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Technical Information
CMOS Bias Controller Characteristics
Figure 6. Functional Block Diagram
Band Select (pin4)
vodcs
CComp
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Bandgap Reference
ground
cpdcs
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APC input (pin2) Supply (pin6) Voltage Clamp
The four main functions that will be described in this section are Standby Mode Control, Band Select, Voltage Clamp, and Current Buffer. The functional block diagram is shown in Figure 6.
Combinational Logic
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Quad Band GaAs Power Amplifier Die
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Please refer to 3GPP TS 05.05, Digital Cellular Communications System (Phase 2+); Radio Transmission and Reception. All GSM specifications are now the responsibility of 3GPP. The standards are available at http://www.3GPP.org/specs/specs.htm
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Advance Information
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The CMOS die within the PAM performs several functions that are important to the overall module performance. Some of these functions must be considered for development of the power ramping features in a 3GPP compliant transmitter power control loop1. Power ramping considerations will be discussed later in this section.
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101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Standby Mode Control
Technical Information
Band Select
Voltage Clamp
Figure 7. Base Bias Voltage vs. APC Input, VCC = 4.0 V
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The Voltage Clamp circuit will limit the maximum bias voltage output applied to the bases of the HBT devices on the GaAs die. This provides protection against electrical overstress (EOS) of the active devices during high voltage and/or load mismatch conditions. Figure 7 shows the typical transfer function of the APC input to buffer output under resistively loaded conditions. Notice the enable function near 350 mV, and the clamp acting at 2.15 V, corresponding to a supply voltage of 4.0 V.
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The Combinational Logic cell also includes a simple gate arrangement that selects the desired operational band by activating the appropriate current buffer. The voltage threshold level at the Band Select input (pin 5) will determine the active path of the bias output to the GaAs die.
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For voltages less than 500 mV at the APC input (pin 4), the PA bias is held at ground. As the APC input exceeds the enable threshold, the bias will activate. After a 3 s delay, the amplifier internal bias will ramp quickly to match the ramp voltage applied to the APC input. In order for the internal bias to precisely follow the APC ramping voltage, it is critical that a ramp pedestal is set to the APC input at or above the enable threshold level with a timing at least 3 s prior to ramp-up. This will be discussed in more detail in the following section, "Power Ramping Considerations for 3GPP Compliance".
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The Combinational Logic cell includes enable circuitry that monitors the APC ramping voltage from the power amplifier controller (PAC) circuit in the GSM transmitter. Typical handset designs directly connect the PA VCC to the battery at all times, and for some PA manufacturers this requires a control signal to set the device in or out of standby mode. The Conexant PAM does not require a Transmit Enable input because it contains a standby detection circuit that senses the VAPC to enable or disable the PA. This feature helps minimize battery discharge when the PA is in standby mode. When VAPC is below the enable threshold voltage, the PA goes into a standby mode, which reduces battery current (ICC) to 6 A, typical, under nominal conditions.
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Technical Information
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Due to output impedance effects, the bias of the GaAs devices increases as the supply voltage increases. The Voltage Clamp is designed to gradually decrease in level as the battery voltage increases. The performance of the clamp circuit is enhanced by the band gap reference that provides a supply-, process-, and temperature-independent reference voltage. The transfer function relative to VBAT is shown in Figure 8. For battery voltages below 3.4 V, the base bias voltage is limited by the common mode range of the buffer amplifier. For battery voltages above 3.4 V, the clamp limits the base bias.
Figure 8. Base Bias Clamp Voltage vs. Supply Voltage
2.6 2.5 2.4 Base Bias Clamp (Volts) 2.3 2.2 2.1 2.0 1.9 1.8 1.7 3.00
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Current Buffer
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The output buffer amplifier performs a vital function in the CMOS device by transferring the APC input voltage ramp to the base of the GaAs power devices. This allows the APC input to be a high impedance port, sinking only 10 A, typical, assuring no loading effects on the PAC circuit. The buffers are designed to source the high GaAs base currents required, while allowing a settling time of less than 3 s for a 1.5 V ramp.
Power Ramping Considerations for 3GPP Compliance
These are the primary variables in the power control loop that the system designer must control: software control of the DSP / DAC software control of the transmitter timing signals ramp profile attributes - pedestal, number of steps, duration of steps layout of circuit / parasitics RC time constants within the PAC circuit design
All of these variables will directly influence the ability of a GSM transmitter power control loop to comply with 3GPP specifications.
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Advance Information
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101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Technical Information
The GSM transmitter power control loop generally involves feedback around the GaAs PA, which limits the bandwidth of signals that can be applied to the PA bias input. Since the PA is within the feedback loop, its own small-signal frequency response must exhibit a bandwidth 5 to 10 times that of the power control loop. As discussed in the previous section, the PA bias is held at ground for inputs less than the enable threshold voltage (typically 350 mV). As the APC input exceeds the enable threshold, the bias will activate. After a 3 s delay, the amplifier internal bias will quickly ramp to match the ramp voltage applied to the VAPC input. Since the bias must be wide band relative to the power control loop, the ramp will exhibit a fast edge rate. If the APC input increases beyond 1 V before the 3 s switching delay is allowed to occur after the bias is enabled, the PA will have significant RF output as the internal bias approaches the applied bias. During this ramp, the internal power control is running "open loop" and the edge rates are defined by the frequency response of the PA bias rather than that of the power control loop. This open loop condition will result in switching transients that are directly correlated to the PA bias bandwidth. Application of an initial APC voltage, which enables the bias at least 3 s before the VAPC voltage is ramped, will ensure that the internal bias of the PAM will directly follow the applied VAPC. As a result, the power control loop will define all edge transitions rather than the PA internal bandwidth defining the transition. Figures 9 and 10 show the relationship of the internal bias relative to the applied APC in two cases. One case has ramping starting from ground; the other case has ramping starting with an initial enable pedestal of 500 mV It is evident that the pedestal level is critical to . ensure a predictable and well behaved power control loop. To enable the CMOS driver in the PAM prior to ramp-up, a PAC output pedestal level to the APC input of the PAM (pin 4) should be set to about 500 mV This pedestal level should have a duration . of at least 3 s directly prior to the start of ramp up. Figure 11 shows typical signals and timings measured in a GSM transmitter power control loop. This particular example is at EGSM Power Level 5, Channel 62. The oscilloscope traces are TxVCO_enable, PAC_enable, DAC Ramp, and VAPC (pin 4). When the TxVCO is enabled, the pedestal becomes set at the APC input of the PAM, then the PAC is enabled, and finally the DAC ramp begins.
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NOTE:
The device specifications for enable threshold level and switching delay are shown in Table 3.
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Although there is a specific time mask template in which the transmitter power is allowed to ramp up, the method is very critical. The 3GPP system specification for switching transients results in a requirement to limit the edge rate of output power transitions of the mobile. Switching transients are caused by the transition from minimum output power to the desired output power, and vice versa. The spectrum generated by this transition is due to the ramping waveform amplitude modulation imposed on the carrier. Sharper transitions tend to produce more spectral "splatter" than smooth transitions. If the transmit output power is ramped up too slowly, the radio will violate the time mask specification. In this condition, the radio may not successfully initiate or maintain a phone call. If the transmit output power is ramped up too quickly, this will cause RF "splatter" at certain frequency offsets from the carrier as dictated by the 3GPP specification. This splatter, known as Output RF Spectrum (ORFS) due to Switching Transients, will increase the system noise level, which may knock out other users on the system. The main difficulty with TDMA power control is allowing the transmitter to ramp the output power up and down gradually so switching transients are not compromised while meeting the time mask template at all output power levels in all operational bands. The transmitter has 28 s to ramp up power from an off state to the desired power level.
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Technical Information
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Figure 9. PAM Internal Bias Performance --No Pedestal Applied
1.6 1.4 1.2
Bias Voltage (V)
Vapc In (V) Internal bias (V) Switching delay 3 s
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Figure 10. PAM Internal Bias Performance --Pedestal Applied
1.6 1.4 1.2 Bias Voltage (V) 1.0
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101788P3 April 15, 2002
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 / GPRS Applications
Figure 11. GSM Transmitter--Typical Ramp-up Signals
Technical Information
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DAC Ramp
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TxVCO_enable
PAC_enable 3 VAPC 4 Ch1 Ch3 200 mV 1.00 V
Ch2 Ch4
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Conexant
Advance Information
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Ordering Information
Model Number CX77314 Manufacturing Part Number CX77314 Package 8 x 10 x 1.5 mm
Operating Temperature -20 C to +100 C
Revision History
Revision P1 P2 Level Date September 2001 March 12, 2002
P3
April 15, 2002
References
Application Note: PCB Design and SMT Assembly/Rework, Document Number 101752
(c) 2001, 2002 Conexant Systems, Inc.
All Rights Reserved.
Information in this document is provided in connection with Conexant Systems, Inc. ("Conexant") products. These materials are provided by Conexant as a service to its customers and may be used for informational purposes only. Conexant assumes no responsibility for errors or omissions in these materials. Conexant may make changes to specifications and product descriptions at any time, without notice. Conexant makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.
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Initial Preliminary Information
Revise: Functional Block Diag.; Table 3; Figure 1 Add: Technical Information Section
Revise: Tables 1, 3, 4; Figures 1, 3, 4, 5, 7, 8, 9 10; Technical Information section
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www.conexant.com General Information:
U.S. and Canada: (800) 854-8099 International: (949) 483-6996 4311 Jamboree Rd. Headquarters - Newport Beach
Newport Beach, CA. 92660-3007
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